Abstract
The far infrared (FIR) photoconductivity of GaAs/AlGaAs multiquantum wells (MQWs) doped with silicon has been investigated. The spectral response is consistent with extrinsic photoconductivity from shallow donors with an effective Rydberg of approximately 10.5 meV. The time-resolved photoconductivity due to stimulation with a cavity-dump FIR laser is measured. Subnanosecond rise and decay times are implied for the MQWs investigated; these times are shorter than for the corresponding bulk cases. Possible effects of geometric confinement on recombination rates are discussed. For a 150-period MQW, the responsivity at 118 μm is approximately 105 V W−1 .
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