Submilliamp threshold 1.3 µm strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP

Abstract

An extremely low 0.4 mA threshold current has been achieved for novel current-blocking 1.3 /spl mu/m strained MQW laser diodes. These devices are grown by MOVPE using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) precursors. The lowest threshold currents of 0.4 and 3.00 mA were obtained at 20 and 85/spl deg/C, respectively, for a 150 /spl mu/m-long 95%/98%-coated device.