Abstract
A new submicrometer InGaAs depletion-mode MISFET with a self-aligned recessed gate structure is presented. The techniques used to implement this FET structure are angle evaporation for submi- crometer pattern definition and sputter etching/wet chemical etching for channel recess. Highest transconductance observed was in excess of 250 mS/mm, with 200 mS/mm as a more typical value. The very high transconductance is attributed partly to the low source series resistance achieved in this structure, typically 0.5 Q.mm or less. From the I-Y characteristics of these FET's, a saturation velocity equal to 2.4 X lo7 cm/s at the drain end was deduced.
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