Abstract
Submicron-meter polycrystalline-SiGe thin-film transistor (TFT) device with tunneling field-effect-transistor (TFET) structure has been studied. With scaling the gate length down to 1 μm, the poly-SiGe TFT device with conventional metal–oxide–semiconductor-field-effect-transistor (MOSFET) structure would be considerably degraded, which exhibits an off-state leakage of about 0.4 nA/μm at a drain bias of 3 V. The short-channel effect would tend to cause the source/drain punch-through, and also increase the lateral electric field within the channel region, thus enhancing the carried field emission via trap states. The TFET structure can be employed to alleviate the short-channel effect in poly-SiGe TFT device. As a result, even for a gate length of only 0.5 μm, the resultant poly-SiGe TFT–TFET device can exhibit good electrical characteristics with an off-state leakage smaller than 0.1 pA/μm and an on/off current ratio of about 9 orders at a drain bias of 3.0 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
