Abstract
Dry etching has been used in conjunction with masked ion beam lithography to fabricate devices with controllable submicrometer dimensions. A new self‐aligned technique used to fabricate MESFET's with 0.15–0.27 μm gate lengths and a new thinning technique used to produce columns with widths less than 10 nm are reviewed. Results on dry etching through stencil masks to obtain linewidths as small as 60 nm are presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have