Sublimation growth of 3C–SiC on 6H–SiC seeds

Abstract

Sublimation growth conditions for 3C–SiC on (0 0 0 1) 6H–SiC were determined. Growth with silicon excess stream results in extended triangular shaped structures. The orientation relation of these polytypes was determined by selected area channelling pattern (SACP). The (1 1 1) 3C lattice plane is parallel to (0 0 0 1) 6H face and the direction [ 1 1 2 ¯ ] 3 C is parallel to [ 1 ¯ 1 . 0 ] 6 H in these planes. Therefore, the 6-fold axis of 6H–SiC is parallel to 3-fold axis of 3C–SiC resulting in double positioning twins and double positioning boundaries (DPBs) because of the ambiguous relation. By optimisation of seed temperature, silicon excess stream and supersaturation one orientation becomes dominating during growth. This is verified by single-crystal X-ray reflection topography (Lang technique).