Abstract
We have greatly reduced the formation of double-positioning boundaries (DPBs) in cubic silicon carbide (3C–SiC) epitaxial films. The films are fabricated on Si (111) substrates using the pulsed-laser deposition method. The reduction in DPBs is achieved by a conventional surface cleaning method, using hydrogen peroxide solutions for the silicon substrate, and by extra care. Pole figure measurements by X-ray diffraction and reflection high-energy electron diffraction measurements revealed that the formation of DPBs was minimal. These successes in creating 3C–SiC films with fewer defects could be applied to the formation of a buffer layer for wide band gap semiconductors with a hexagonal crystal structure, such as gallium nitride.
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