Abstract
The authors demonstrate, using pump-probe experiments, that defects created by a 200 MeV Au/sup +/ ion beam in bulk GaAs reduce the relaxation time of the saturable absorption of the material to as little as 200 fs. The sample absorption is modulated over a spectral width of 50 nm. The integrated value of the absorption modulation thus shows the high absorption efficiency of the irradiated material. A very small variation in relaxation time is found when the density of photocreated carriers is increased to /spl sim/5/spl times/10/sup 18/cm/sup -3/. This material appears to be very promising for applications in optical processing and ultrafast measurement at high pulse repetition rates.
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