Thermal properties of power Si MOSFET by considering electron - Phonon scattering using Monte Carlo Simulation

Abstract

This paper describes the effect of the variation of energy relaxation time on thermal properties of power Si MOSFET (Metal - Oxide - Semiconductor Field-Effect Transistor) using Electro-Thermal Analysis. In our previous study, we investigated thermal properties of power Si MOSFET using Electro-Thermal Analysis. However, in these calculations, to reduce calculation cost, we assume energy relaxation time is constant at 0.3 ps. However, to investigate more accurate properties of power Si MOSFET, the effect of variation of energy relaxation time of power Si MOSFET should be considered. Then, to calculate the variation of the relaxation time, Monte-Carlo Simulation is attractive method. Thus, we obtain the variation of the relaxation time in the case of Si with Monte-Carlo Simulation in advance, and the variation of energy relaxation time is applied to Electro-Thermal Analysis. And, we perform the Electro-Thermal Analysis, and the effect of the variation of energy relaxation time on properties of power Si MOSFET is investigated. From the result, the variation of energy relaxation time has an effect on the property of electron of power Si MOSFET, however, the variation of the energy relaxation time has a small effect on thermal property in the calculation conditions of this paper.