Abstract
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195-855 MeV.
Highlights
The basic effect of the channeling process in a crystal is in an anomalously large distance which particle can penetrate moving along a crystallographic plane or an axis and experiencing the collective action of the electrostatic field of the lattice ions [4]
The synchrotron radiation appears as a result of circular motion of the channeling particle along the bent crystallographic planes
Using the newly developed code [1], which was implemented as a module in the MBN Explorer package [2], we have performed the Monte Carlo simulations of trajectories of ultra-relativistic electrons and positrons in oriented straight, bent and periodically bent single Si crystals
Summary
The basic effect of the channeling process in a crystal is in an anomalously large distance which particle can penetrate moving along a crystallographic plane (the planar channeling) or an axis (the axial channeling) and experiencing the collective action of the electrostatic field of the lattice ions [4]. Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. In the present paper we present new results on electron and positron channeling and emission spectra in straight, uniformly bent and periodically bent silicon crystal.
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