Abstract
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystals. The projectile trajectories are computed using the newly developed module [G.B. Sushko, V.G. Bezchastnov, I.A. Solov’yov, A.V. Korol, W. Greiner, A.V. Solov’yov, J. Comput. Phys. 252, 404 (2013)] of the MBN Explorer packageb [I.A. Solov’yov, A.V. Yakubovich, P.V. Nikolaev, I. Volkovets, A.V. Solov’yov, J. Comput. Chem. 33, 2412 (2013)]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
