Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Abstract

A detailed review of sub‐5 nm 2D semiconductor monolayer (ML) field‐effect transistors (FETs) is presented. A brief introduction to the fundamentals of 2D materials and their properties is provided followed by a critical review to propose an appropriate channel material from the available 2D materials. Various device simulation techniques incorporating density functional theory (DFT) and nonequilibrium Green's function (NEGF) are discussed in order to comprehend the distinctive features of 2D materials and the ballistic performance of sub‐5 nm ML 2D FETs. Relevant, recent experimental progress is also discussed. The review suggests that sub‐5 nm monolayer FETs based on 2D semiconductors like black phosphorene, WSe2N4, silicene, tellurene, arsenene, WSe2, MoTe2, MoS2, InSe, α‐CS, MoSi2N4, WS2, Bi2O2Se, GeSe, SnSe2, SnS2, AsP, GeS, MoSi2N4, BiH, SnSe2 and MoTe2 show excellent device performance meeting the International Technology Roadmap for Semiconductor (ITRS) requirements (2013 Version) for both high‐performance (HP) and low‐power (LP) applications in terms of on‐state current, subthreshold swing (SS), delay time, and power delay product (PDP).