Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications

Abstract

With the constant scaling down of transistors, “More Moore” has put forward requirements for channel materials. Two-dimensional materials are considered as potential next-generation channel materials due to their unique physical properties. Herein, we study the ballistic transport characteristics of sub-10 nm monolayer (ML) planar GaN metal–oxide–semiconductor field-effect transistors (MOSFETs) based on density functional theory and the non-equilibrium Green's function method. The calculation results indicate that n-type ML planar GaN MOSFETs with gate lengths not less than 5 nm exhibit excellent subthreshold characteristics, fast switching speeds, and low switching energies, and the corresponding parameters (off-current, on-current, delay time, and power-delay product) can simultaneously meet the requirements of the International Roadmap for Devices and Systems for the 2028 horizon for high-performance and low-power applications. Therefore, ML planar GaN is predicted to be a reliable next-generation channel material to extend Moore's law.