Study on X-Ray Integral Diffraction Intensity of GaAs Photocathode

Abstract

Listen

Translate article

In order to precisely predict the sensitivity of Ф18 mm transmission-mode GaAs photocathode, a concept of integral diffraction intensity is proposed based on X-ray diffraction principle after analyzing the predecessors′ limitations of testing the micro-area of such photocathode and GaAs photocathode of image intensifier tube is plane electron source in this paper. The integral diffraction intensity on the entire photocathode surface was obtained by multi-points detection in the effective area of the photocathode with integral method. The crystal quality of entire photocathode surface will be taken with the integral diffraction intensity. According to the principle, X-ray diffraction testing for 4 samples of GaAs photocathode modules was executed with high-resolution four-wafer X-ray Diffractometer whose test spot size is 4 mm×5 mm. The diffraction curves were obtained and the integral diffraction intensity was calculated. Subsequently the 4 photocathode modules was activation processed with Cs-O in ultra-high vacuum system simultaneity the photocurrent of photocathode modules was measured. Comparing the variation of diffraction curve with integral diffraction vs photocathode photocurrent curve, they show that the greater the integral diffraction intensity of is, the more photocurrent is in the photocathode module. The variation relation curve between X-ray integral diffraction intensity and photocurrent in the photocathode was fitted with least square method. The curve, which accords with logarithm curve and whose fitting degree is 0.878, was achieved. Since photocathode sensitivity is direct proportion to photocathode photocurrent. The above results prove that A Practicality Φ18mm photocathode of image intensifier tube is plane electron source, GaAs photocathode sensitivity and other photoelectric performance lies on entire photocathode surface crystal quality, the photocathode module integrality reflected by the integral diffraction intensity plays crucial role of GaAs photocathode sensitivity. So integral sensitivity of Ф18 mm transmission-mode GaAs photocathode can be precisely predicted with X-ray integral diffraction intensity, some feasible ideas for further research of GaAs photocathode was obtained in this paper.