Abstract
Transient ionization radiation experiment is carried out with the Qiang Guang-I accelerator in Northwest Institute of Nuclear Technology to investigate the dose rate damage pattern of 0.18μm SRAM (Static Random Access Memory). The experiment result shows that the transient ionization radiation damage pattern of 0.18μm SRAM (static random access memory) is mainly because of the photocurrent generated in memory cell flowing into the power bus which reduces core voltage of memory cell during transient radiation. Spice is also used to demonstrate the reliability between the transient ionization radiation sensitivity and the reduction of core voltage which can reduce the static noise margin of the SRAM memory cell.
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