Study on the nitridation of β-Ga2O3 films**Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0404201), the Six-Talent Peaks Project in Jiangsu Province, China (Grant No. XCL-107), the State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and

Abstract

Single-crystal GaN layers have been obtained by nitriding β-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.