Synthesis and characterization of β-Ga2O3@GaN nanowires**Project supported by National Key Research and Development Program of China (Grant No. 2017YFB0404201), State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting & Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Abstract

In this work, we prepared the β-Ga2O3@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga2O3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.