Study on the fabrication of high-quality hafnium oxide thin films using spatial rotated atomic layer deposition and supercritical fluids treatment

Abstract

This study explores the experimental outcomes and discussions surrounding the deposition of high-quality hafnium oxide (HfO2) thin films using spatial rotated atomic layer deposition (SRALD). The primary objective was to enhance the efficiency of ALD processes while maintaining film quality comparable to conventional methods. The SRALD system, developed by Kudos Nano Technology, was employed to deposit HfO2 films over a four-step process. Following deposition, the films underwent high-pressure annealing and supercritical fluids treatment, which are known for reducing thermal budgets. The key findings revealed that high-pressure annealing resulted in a significant reduction in the leakage current by up to 50%, while supercritical fluids treatment improved the dielectric constant of the films, reaching values as high as 23. These treatments also contributed to enhancing the uniformity and density of the films, as confirmed by cross-sectional transmission electron microscopy and x-ray reflectometry analyses. The electrical properties of the resulting metal–insulator–semiconductor capacitors were thoroughly investigated, demonstrating a marked improvement in capacitance-voltage characteristics with minimal hysteresis.