Abstract
Czochralski-grown crystal silicon (CZSi) was doped by neutron transmutation. The deep energy levels after heat treatment of neutron transmutation doped Czochralski-grown silicon (NTDCZSi) were investigated by photo-induced transient spectroscopy (PITS) and deep level transient spectroscopy (DLTS). The interstitial oxygen concentration and substitutional carbon concentration were measured by Fourier transfer infrared spectrometry (FTIR). The experimental results showed that there are seven deep levels in the band gap of silicon caused by neutron irradiation. The defect centers corresponding to these deep levels were also deduced. The formation and decomposition of these defects during annealing were discussed.
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