Abstract
In this work, n-type neutron transmutation doped silicon irradiated by high energy, low dose protons have been investigated. Proton irradiation introduces deep energy levels in the bandgap of silicon, which act as recombination centers. Parameters of deep energy levels have been measured by the deep level transient spectroscopy (DLTS) method. Five electron traps and two hole traps have been observed. Deep energy levels are characterized by energy position in the bandgap, capture coefficients for majority carriers, and concentration profiles of trap densities. The possible identity of each trap is discussed with respect to data published in the literature.
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