Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis

Abstract

In this work we propose a standard practice covering temperature calibration of a Si substrate, ranging from 400 to 1000 °C, for temperature programmed desorption (TPD) analysis. The practice consists of heating silicon calibration materials at a controlled rate in a TPD instrument, measuring characteristic desorption peak temperatures, and quadratic calibration fitting the measured temperatures to standard temperatures. The calibration materials are (1) a CaC2O4⋅H2O pellet on Si, (2) Ar, and (3) H ion implanted into Si wafers. The standard temperatures of the characteristic desorption, associated with decomposition, structural transformation, and lamination of Si, were determined by a special TPD instrument with the highest isothermal space around the specimen in several laboratories, which was confirmed to be accurate for practical application. The precision of this practice was determined in an interlaboratory test in which four to five laboratories participated using two different instrumental models. This proved that the correction practice provided interlaboratory precision of 5.7 °C between 400 and 1000 °C for ramping rates of 10, 30, and 60 °C/min.