Abstract
Organic matter on a Si surface was investigated using thermal desorption spectroscopy (TDS). It was clarified that acetone, ethanol and toluene contaminants on a bare Si surface can be detected by the TDS system, ESCO EMD-WA1000K, and these organic contaminants have different desorption temperatures and fragment patterns. Therefore organic contaminants on Si wafers were thought to be separated by desorption temperature, and characterized from the fragment pattern at that desorption temperature. Here, the desorption temperature is thought to be proportional to the activation energy for desorption. Thus bonding strength between organic contaminants and the Si surface is qualitatively estimated from the desorption temperature.
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