Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Abstract

In this work, the low frequency noise (LFN) characteristics of Hydrogen-terminated diamond FETs are investigated. Both generation-recombination (GR) noise and flicker noise (1/f noise) are found to contribute to the LFN spectrum. The characteristic frequency of f01 = 0.1 Hz, f02 = 30 Hz, f03 = 300 Hz and corresponding effective trap density (Neff) of the GR centers are obtained. By changing the LFN measurement temperature, a trap activation energy level (Ea) of 0.12 eV is extracted from an Arrhenius plot. The dominant mechanism of the 1/f noise for the H-terminated diamond FETs follows the correlated mobility fluctuations (CMF) model. By fitting the experimental data to the CMF model, the trap density and scattering coefficient of the carriers are extracted to be 6.4×1020 eV−1 cm−3 and 4×105 V·s/C. At last, the trap density of the H-terminated diamond FETs is compared with other state-of-the-art GaN and Si based devices. A moderate trap density was obtained without any interface optimization, suggesting that H-terminated diamond FETs could be a promising future technology for power electronics.