Abstract
Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps were performed and the resultant TFT performance was compared for each step after channel formation, after deposition of insulating film or after completed TFT formation to optimize the hydrogen annealing process. Higher TFT performance is expected by performing the pre-hydrogen annealing after channel formation and subsequent forming annealing after completing Al electrode below 400°C.
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