Abstract
High electric field annealing effect in thin gate oxide of MOS structure is studied in depth, and the detrapping mechanisms of trapped charge in the gate oxide are investigated. Comparison between the growth mechanism and the detrapping mechanism of trapped charge in gate oxide is made by experiments and simulations. A satisfactory physical description is presented for explaining this effect. Comparison between annealing under negative and positive gate voltages shows that the former is more effective .
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