Abstract
We proposed a new kind of distributed feedback (DFB) semiconductor laser based on the sampled moire grating (SMG) integrated with a grating reflector (GR). Coupling coefficient along laser cavity can be easily controlled and π phase shift (π-PS) can be introduced by SMG. The GR, which is a uniform sampled grating, only provides reflection for facet light. The both facets are coated with anti-reflection coatings (AR/AR) to avoid the influence of facet-phase. Therefore, more output power, single longitudinal mode (SLM) operation and high wavelength precision can be simultaneously achieved. An 8-channel DFB laser array based on the proposed structure has also been simulated.
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