Abstract
We propose a new kind of distributed feedback (DFB) semiconductor laser based on the sampled Moire grating (SMG) integrated with a grating reflector (GR). Coupling coefficient along the laser cavity can be controlled, and $\pi $ phase shift ( $\pi $ -PS) can be introduced by SMG. The GR, which is a uniform sampled grating, can provide light reflection instead of high reflection (HR) facet coating. Thus, the front and rear facets are both coated with anti-reflection coatings (AR/AR) to avoid the influence of random grating phase at the HR facet. Therefore, more output power, better single longitudinal mode (SLM) operation, and higher wavelength precision can be simultaneously achieved, compared with traditional DFB lasers with AR/HR facet coatings. As an example, an 8-channel DFB laser array based on the proposed structure has been simulated. The proposed laser may benefit the applications requiring both high output power and wavelength precision, such as wavelength division multiplexing (WDM) transmission systems and gas sensors.
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