Abstract
In order to obtain information on the degradation of solar cells in artificial satellites as a result of cosmic ray radiations, positron annihilation lifetime experiments were performed for B-doped p-type Czochralski (CZ) silicon wafers irradiated at room temperature with 1 MeV electrons with fluences between 1014 and 1017 e/cm2. Positron lifetime measurements were done at 100 K to improve the trapping rates of positrons with defects. The mean lifetime of irradiated Si was shorter than that of unirradiated Si. We found that short lifetime defects (approximately 100 ps) existed, which could be associated with complexes of Si with interstitial oxygen atoms, doped B and vacancies resulting from irradiation. Lifetime components longer than those of the bulk accounted for the formation of thermal donors and divacancies.
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