Study on Controllable growth of graphene prepared by CVD

Abstract

Graphene is a two-dimensional honeycomb crystal of monoatomic thickness composed of hexagonal sp2 hybrid carbon atoms. Since the mechanical separation of Andre Gamm and Konstantin Novoselov in 2004 to obtain a single layer of graphene, this unique two-dimensional structure makes graphene excellent physical, chemical, mechanical, electrical and other properties. It has become the focus of much research in recent years. These properties include exceptionally high charge, high mechanical strength and elasticity, optical clarity and a variety of possible chemical modifications that make graphene promising in micro-nanoelectronics, photodetection and conversion materials, structural and functionally enhanced composites and storage. It can be applied in a wide range of fields, but graphene is different from graphite in nature, and its size is small and the yield is low. So how to prepare high quality graphene is the key to study its application prospects. The emergence of chemical vapor deposition (CVD) technology solves these problems and has evolved into an important method for preparing large-area, large-size, multi-purpose graphene. Large-sized graphite thin single crystals can be obtained on a substrate by controlling the growth mode and different treatments for the substrate. Due to the strong interaction between carbon atoms and the substrate, there are still many difficulties and challenges in directly growing graphite on the insulating substrate. This topic aims to prepare graphene by chemical vapor deposition (CVD) and prepare it. The method is improved to obtain graphene with excellent performance, which provides more feasibility for the practical application of graphite thinning in semiconductor devices.