Abstract
Feasibility of polycrystalline silicon (poly-Si) films deposited by catalytic CVD (cat-CVD) method as a solar cell material is studied. The poly-Si films are obtained at 300°C by catalytic cracking reactions of a gaseous mixture of SiH 4 and H 2 on a heated tungsten (W) wire. Present poly-Si films consist of both amorphous and polycrystalline phases. The mixing ratio of amorphous to poycrystalline phases can be controlled by deposition conditions. Because of both large optical absorption and relatively large mobility of carrier transport, a cat-CVD poly-Si film is feasible candidate for solar cell material.
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