Abstract
We study the capacitance–voltage (C–V) characteristics of thermally stable high-performance diamond field-effect transistors (FETs) with NO2 hole doping and an Al2O3 gate insulator layer. We measured C–V characteristics and obtained the results reproducibly. Then, we fitted the experimental C–V results by solving the Poisson equations self-consistently, and determined the interface parameters such as the interface fixed charge and interface states. On the basis of the results, we constructed band diagrams of the metal–oxide–semiconductor structure in a diamond FET and explained the interface properties.
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