Abstract
Ultrathin Vanadium nitride (VN) thin film with thickness around 10 nm was studied as diffusion barrier between copper and SiO 2 or Si substrate. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy and current–voltage ( I– V) technique were applied to characterize the diffusion barrier properties for VN in Cu/VN/Si and Cu/VN/SiO 2 structures. The as-deposited VN film was amorphous and could be thermal stable up to 800 °C annealing. Multiple results show that the ultrathin VN film has good diffusion barrier properties for copper.
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