Abstract
VN thin film was studied as diffusion barrier between copper and Si. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM) were applied to characterize the thin film properties. The as-deposited VN is amorphous and can be thermal stable up to 800/spl deg/C annealing. The ultrathin VN shows good diffusion barrier properties for copper.
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