Abstract
The trap characteristics of low-temperature polysilicon thin film transistors (TFTs) are studied using a current transient method that is based on the trapping and detrapping of charge carriers from the trap sites in the device. Analysis of the measured current transient curve allowed three types of detrapping behavior to be identified, each of which displayed a different time constant, activation energy, and spatial position. This current transient method can be integrated into the negative bias temperature instability stress test used for the reliability study. The peak amplitudes of the traps increase because of the stress applied in the test, thus demonstrating that the degradation mechanism of the TFTs is closely related to changes in the traps in these devices.
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