Abstract
In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current–voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs ( W/ L = 1.5/1.5 μm) had the field-effect-mobility exceeding 400 cm 2/V s, on/off current ratio higher than 10 8, superior short-channel characteristics and higher current drivability.
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