High-Speed Memory Cell Circuit Design Based on Low-Temperature Poly Silicon TFT Technology

Abstract

In this paper, low-temperature poly-silicon (LTPS) thin-film transistors (TFT) are used for LTPS memory on glass substrates. System on panel (SOP), combined with memory, controller, and driver circuits on a glass substrate, will be the most suitable applications for TFT panels in the near future. Recently, the low-temperature poly-silicon thin-film transistors prepared on glass substrates have been studied extensively. Compared to amorphous silicon TFT (a-Si TFT), the LTPS TFT has electron mobility that is several orders of magnitude higher. Therefore, it is possible to integrate the LTPS TFT with peripheral circuits on the same glass substrate for advanced flat panel display applications. We use LTPS technology to achieve a high-speed memory cell that adopts a true single phase clocking (TSPC) circuit. Finally, the experimental results show that the high-speed TSPC LTPS-TFT memory operates at 24 MHz and accomplishes the SOP design target.