Abstract
TiN/TiC bilayers were produced using a PAPVD plasma assisted vacuum arc system. During the production process, both TiN and TiC coatings, pressure into the reaction chamber, voltage of the discharge and interelectrode distance were maintained fixed for each case. TiC coatings were grown varying the temperature of the substrate at 50 °C, 100 °C and 150 °C, while the TiN coatings were grown maintaining at room temperature. The analyses were carried out by using X-ray diffraction, identifying FCC phases and orientation in planes (111), (200), (221) and (311). XPS characterization displayed the formation of TiC and TiN by means of the Ti2p, C1s and N1s peaks narrow spectra study. A great influence of the substrate temperature in the films was observed, specially in the transition from amorphous to crystalline phases. The lattice parameters also present changes as a function of the temperature. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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