Abstract
In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors.
Highlights
Porous silicon (PS) is obtained by electrochemical attack of single crystalline silicon [1]
This direct method enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no
Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors
Summary
Porous silicon (PS) is obtained by electrochemical attack of single crystalline silicon [1]. PS has been investigated in the area of photovoltaic [6] as an antireflection coating and as a sacrificial layer for the layer transfer process (LTP) [7,8] This material presents a thermal conductivity near to thermal conductivity of silicon dioxide [9]. This material is an excellent candidate to ensure the thermal insulation for the micro sensors on silicon because it ensures the mechanical stability of the microstructure [10]. We expose a direct method of measurement of the thermal conductivity for PS layers This parameter is founded on their micro-Raman response to a laser excitation producing a thermal gradient in material. The analysis of surface and indepth distribution of the crystallites composing the material is presented
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