Abstract
The transverse conductivity of undoped polycrystalline silicon (PCS) films 0.2–0.6 µm thick, deposited by magnetron sputtering on heavily doped single-crystal substrates is studied. Molybdenum films 0.4 µm thick were used as top electrodes. The dependences of the film resistivity on the electric field strength are obtained, which are described by the space-charge limited conduction model for the quasi-uniform distribution of traps in the PCS band gap.
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