Study of the physical properties of BiFeO3 films obtained by RF sputtering using a homemade target

Abstract

Ferroelectric materials have attracted significant attention in recent decades because they can be used in various electronic devices. BiFeO3 (BFO) has a perovskite-type ABO3 structure with antiferromagnetic and ferroelectric properties and a band gap within the visible light range, making it a promising candidate for use in sensors and solar cells. In this study, BiFeO3 thin films were grown by radio frequency (RF) sputtering using a homemade target and sintered at different times to evaluate the influence of sintering time on their physical properties. Its physical properties were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. These results revealed that all films maintained a perovskite-like structure with rhombohedral and bismuth-rich secondary phases (Bi2O2.33). Atomic force microscopy (AFM) and piezoresponse force micrography (PFM) images depicted the impact of sintering time on surface roughness and ferroelectric domain reorientation. The optical properties, such as n, k, and the band gap of all samples, were obtained using reflection-transmission spectroscopy. The photoresponse under dark, visible and UV illumination were evaluated on BFO films grown over glass-FTO substrate.