Abstract
The effect of laser radiation with a wavelength of 970 nm and a power density of 0.29–2.10 W/cm2 on the process of atomic layer deposition of alumina films from precursors (trimethylaluminium + water vapor) is studied. Laser irradiation is performed at the stages of reactor purging after the introduction of precursors. The results of a comprehensive analysis involving spectral ellipsometry, atomic force microscopy, X-ray diffractometry, and secondary-ion mass spectrometry have revealed that laser irradiation (i) does not alter the rate of deposition of alumina films onto silicon slices; (ii) does not alter the surface relief (roughness) of alumina films; (iii) does not alter the depth profile of the chemical composition of alumina films; (iv) reduces the average density of irradiated regions of alumina films by 5–10% relative to the density of nonirradiated regions.
Published Version
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