Abstract
We investigated the effect of In composition variation in the active region and barrier layers on the main performance parameters (threshold current density, slope efficiency, external differential quantum efficiency, radiative, Auger, Shockley-Read-Hall (SRH) and stimulated recombination and potential distribution in the structure) of InGaN quantum well (QW) lasers working at a wavelength in the blue spectrum of 462 nm, in order to estimate if the performance of such a device can be improved or not as a result of these composition variations.
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