Abstract
For almost three decades, InGaN (indium gallium nitride) quantum well (QW) lasers have received a lot of interest from the scientific research community. Recently, this material system has become probably the most intensively studied among all the material systems used for quantum well lasers. We simulated the characteristics of an In<sub>0.02</sub>Ga<sub>0.98</sub>N QW laser at a wavelength of 462 nm, particularly the carrier concentration distribution, the potential distribution, the energy band diagram, the wave intensity profile, the I-V and L-I characteristics, the background absorption, the radiative, Auger, Shockley-Read-Hall (SRH) and stimulated recombination, threshold current density, slope efficiency and external differential quantum efficiency, to gain an almost exhaustive general view of the performance characteristics of this structure, constituting in a more useful reference for applications than previous incomplete data gathered for this structure.
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