Abstract
Semiconductor lasers with an active region containing six quantum wells are investigated experimentally. The temperature dependences of working characteristics (threshold current density, external differential quantum efficiency, and directional pattern) are analyzed. Anomalous behavior of the temperature dependence of the threshold current and external differential quantum efficiency, associated with a negative characteristic temperature and a decrease in the quantum efficiency of radiation upon a decrease in temperature, is detected. A narrowing of the directional patterns in the plane perpendicular to the p-n junction upon an increase in temperature is revealed.
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