Study of the capacitance and conductance (C - V – F & G – V – F) of the Thin Film based Cu/p-SnSe Schottky Barrier Junction

Abstract

SnSe, the well-known transition metal chalcogenide family member is perceived to be preferable for its tremendous device applications. Here, the authors have tried to fabricate a p-SnSe/Cu Schottky junction diode. The Capacitance(C)–Voltage (V) & Conductance(C)–Voltage(V) characteristics with different frequency(f) of the fabricated diode were studied at the applied bias voltage -1 to 1 V in f range from the 0.1 MHz to 1 MHz at room temperature. Effect of applied Frequencies on various parameter: Series Resistance (Rs), Insulator layer capacitance (Cox), and Interface States density (Nss) were evaluated by means of maximum capacitance (Cm) along with maximum conductance (Gm) in the region were strong gathering region. From the results confirm negative resistance at low frequencies due to negative reactance, but at high frequencies resistance becomes positive, which depicts novel capacitive properties which can be applicable for novel applications of SnSe-based diode.