Abstract
In this paper, the influence of the BNx implanted buffer layer on growth and residue stress of c-BN films were mainly investigated. The experiment results showed that the introduce of BNx implanted buffer interlayer can increase the c-BN content in the films and reduce the residue stress obviously. When the nitrogen dose was 9.6×1017 N+/cm2, the residue stress of c-BN films reached the least value of 3.0GPa. AFM showed that the surface of the c-BN film on the BNx implanted buffer layer is low in roughness and small in grain size. XPS analysis results show an interfacial mixing in the buffer layer have an even N/B distribution. And the surface of buffer interlayer was mainly in BN phase, which is the main reason to improve the growth conditions and reduce the residue stress of c-BN films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
