Abstract
Nonstoichiometry in undoped semi-insulating GaAs grown by the liquid-encapsulated Czochralski technique has been evaluated by absolute lattice parameter measurements using the Bond method. The lattice parameter increases with increasing As atom fraction in the initial melt. The observed range of lattice parameters and the variation along the growth direction suggest that the solidus curve in the phase diagram extends to the As-rich side than to the Ga-rich side, and the congruent point is located on the stoichiometric point or the slightly As-rich side.
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