Study of non-exponential electron capture by the main electron trap in GaAs 0.62P 0.38

Abstract

In deep level transient spectroscopy (DLTS) exponentiality of level population changes in thermal emission as well as in capture processes is assumed. This is however, contrary to what is often observed in experiment. In this paper a model for interpretation of DLTS data in the case of non-exponential capture of electrons is proposed. It is assumed that the height of the capture of carrier changes locally according to the Gaussian distribution This model is applied to the case of deep electron trap with thermal activation energy equal to ΔE B = 0.39 eV, observed in VPE GaAs 0.62P 0.38. Te. This model provides a capture barrier as well as a capture cross-section which are different from the ones predicted by the exponential transient model i.e., the ones derived from the slope of capacitance changes due to the filling pulse versus pulse duration at very short times.