An investigation of the origin of the main electron trap in GaAs

Abstract

The origin of the main electron trap (0.83 eV) in GaAs is investigated by creating conditions to favour the formation of Ga-vacancy-oxygen complex in the material. Two specific schemes have been used, (1) Liquid phase epitaxial (LPE) growth of the material at high temperatures (≈1000°C) with oxygen doping and (2) Electron bombardment of LPE material and subsequent annealing. The traps have been characterised by transient capacitance technique. The results show that the main electron trap cannot be produced by either of the schemes thereby implying that a complex involving Ga-vacancy and oxygen may not be responsible for the trap.