Abstract
Deep level defects in n-GaAs LEC crystals have been investigated by computerised deep level spectroscopy. We observed two electron traps with energies of 0.83 eV (EL2) and 0.38 eV (EB6). The effects of high temperature (850°C) heat treatment on the grown-in defects were also studied. The results showed that three electron traps with emission activation energies of 0.14, 0.35 and 0.44 eV (EI1) were generated, and that the 0.38 eV (EB6) level was removed as a consequence of the anneal. It is believed that the first two levels are reported for the first time. It was also found that the main electron trap in GaAs, 0.83 eV (EL2), was reduced in concentration as a result of annealing. The depth distribution of this electron trap was measured taking into account the nonionized front region of the depletion layer. Radial distributions of the EL2 trap and shallow donors have also been characterised. Both profiles were W-shaped.
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